Samsung Demonstrates 900-Layer V-NAND by Bonding Two 450-Layer Stacks
Quick Report
Samsung has reportedly reached a 900-layer V-NAND milestone by stacking two 450-layer NAND structures into a single package rather than extending a monolithic die. The approach is part of its long-term path toward 1,000-layer NAND by 2030 as conventional vertical scaling becomes harder.
The company is said to be using Cell Multi-Bonding, a hybrid bonding variant that permanently fuses chips through embedded metal interconnects. Samsung also reportedly addressed process challenges such as wafer warping and overlay alignment with new chuck and bonding techniques tailored for very thick high-layer designs.
This packaging-first strategy highlights how future NAND gains may depend as much on integration technology as on raw layer count increases inside a single die.
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