Samsung Confirms HBM4E Reaches 16 Gbps per Pin

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Samsung confirms HBM4E memory will reach 16 Gbps per pin, raising maximum bandwidth to 4 TB/s per 2,048-pin stack.

Quick Report

Samsung has confirmed that its upcoming HBM4E memory is being prepared for speeds of 16 Gbps per pin. With 2,048 pins per stack, that rate would deliver up to 4 TB/s of bandwidth from a single HBM4E stack, up from about 3.6 TB/s at 14 Gbps per pin.

Samsung is currently offering 12-layer HBM4E stacks with 48 GB of capacity, while future products are expected to include 8-layer 32 GB and 16-layer 64 GB configurations. The memory uses a sixth-generation 10 nm-class DRAM process and a custom base die made on the company 4 nm SF4 process for integration into advanced AI accelerators.

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Source(s)

  • TPU