Intel Details HB3DM Z-Angle Memory as a High-Bandwidth HBM Alternative
Quick Report
Intel and SoftBank-backed Saimemory have outlined HB3DM, a Z-Angle stacked memory concept aimed at AI accelerators and pitched as a high-bandwidth alternative to conventional HBM scaling. The first disclosed design uses a nine-layer structure with one logic base die and eight DRAM layers, connected through hybrid bonding and dense TSV integration.
The throughput of roughly 5.3 TB/s per 10 GB module, which would exceed typical HBM4 per-stack bandwidth claims, though at lower capacity than top HBM4 stack configurations. Saimemory is reportedly targeting early prototypes in 2028 and commercial availability around 2029, making this a medium-term roadmap play rather than a near-term memory transition.
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