Infineon to Start 300mm GaN Wafer Production With Customer Samples by Q4 2025 as TSMC Exits GaN Fabrication Market

Quick Report

Infineon Technologies AG has announced that its 300-millimeter gallium nitride (GaN) wafer manufacturing process is on track, with first customer samples expected in the fourth quarter of 2025. This development comes at a strategic time as industry sources report that TSMC is planning to exit the GaN fabrication market, potentially leaving a significant gap in the industry that Infineon is well-positioned to fill.

  • Infineon's GaN Milestone: The company has become the first semiconductor manufacturer to successfully develop 300-millimeter GaN power wafer technology within its existing high-volume manufacturing infrastructure
  • Efficiency Gains: The larger 300mm wafer diameter allows 2.3 times more chips to be produced per wafer compared to traditional 200mm wafers
  • Market Timing: First customer samples will be available in Q4 2025, with full production scale-up to follow
  • TSMC's Exit: According to industry sources, TSMC plans to exit the GaN fabrication market, potentially strengthening Infineon's position
  • Growing Market: Analysts expect the GaN revenue for power applications to grow by 36% annually to approximately $2.5 billion by 2030

GaN power semiconductors are being rapidly adopted across multiple sectors due to their higher power density, faster switching speeds, and lower power losses. Key application areas include:

  • Power supplies for AI data centers
  • Solar inverters for renewable energy
  • Chargers and adapters for consumer electronics
  • Motor control systems for industrial automation
  • Electric vehicle charging infrastructure
  • Humanoid robots requiring high-efficiency power electronics

Market analysts from Yole Group expect the GaN revenue for power applications to grow by 36 percent annually, reaching approximately US $2.5 billion by 2030.

Written using GitHub Copilot Claude 3.7 Sonnet in agentic mode instructed to follow current codebase style and conventions for writing articles.

Source(s)

  • Infineon Press Release - 300mm GaN Manufacturing
  • Yole Group - Power SiC and GaN Compound Semiconductor Market Monitor
  • Industry Analysis - GaN Semiconductor Market
  • TPU